238000005229 chemical vapour deposition Methods 0.000 description 24.VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32.FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10.229910021332 silicide Inorganic materials 0.000 claims description 10.239000011810 insulating material Substances 0.000 claims description 22.239000003989 dielectric material Substances 0.000 claims description 40.239000004065 semiconductor Substances 0.000 claims description 170.239000010703 silicon Substances 0.000 claims abstract description 22.229910052710 silicon Inorganic materials 0.000 claims abstract description 22.239000012212 insulator Substances 0.000 claims abstract description 36.239000007769 metal material Substances 0.000 claims abstract description 42.239000000758 substrate Substances 0.000 claims abstract description 180.238000004519 manufacturing process Methods 0.000 title description 46.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA Priority to US14/931,078 priority Critical patent/US9543397B2/en Publication of US20160056249A1 publication Critical patent/US20160056249A1/en Application granted granted Critical Publication of US9543397B2 publication Critical patent/US9543397B2/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee STMicroelectronics lnc USA Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Walter Kleemeier John Hongguang Zhang Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US14/931,078 Other versions US20160056249A1 ![]() Google Patents Backside source-drain contact for integrated circuit transistor devices and method of making sameÄownload PDF Info Publication number US9543397B2 US9543397B2 US14/931,078 US201514931078A US9543397B2 US 9543397 B2 US9543397 B2 US 9543397B2 US 201514931078 A US201514931078 A US 201514931078A US 9543397 B2 US9543397 B2 US 9543397B2 Authority US United States Prior art keywords forming layer substrate source contact Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. ![]() Google Patents US9543397B2 - Backside source-drain contact for integrated circuit transistor devices and method of making same ![]() US9543397B2 - Backside source-drain contact for integrated circuit transistor devices and method of making same
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